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离子电子卤化物钙钛矿忆阻器实现具有二阶复杂度的神经形态计算。

Ionic-electronic halide perovskite memdiodes enabling neuromorphic computing with a second-order complexity.

机构信息

Department of Chemistry and Applied Biosciences, Institute of Inorganic Chemistry, ETH Zürich, Zürich CH-8093, Switzerland.

Empa-Swiss Federal Laboratories for Materials Science and Technology, Dübendorf CH-8600, Switzerland.

出版信息

Sci Adv. 2022 Dec 23;8(51):eade0072. doi: 10.1126/sciadv.ade0072.

DOI:10.1126/sciadv.ade0072
PMID:36563153
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9788778/
Abstract

With increasing computing demands, serial processing in von Neumann architectures built with zeroth-order complexity digital circuits is saturating in computational capacity and power, entailing research into alternative paradigms. Brain-inspired systems built with memristors are attractive owing to their large parallelism, low energy consumption, and high error tolerance. However, most demonstrations have thus far only mimicked primitive lower-order biological complexities using devices with first-order dynamics. Memristors with higher-order complexities are predicted to solve problems that would otherwise require increasingly elaborate circuits, but no generic design rules exist. Here, we present second-order dynamics in halide perovskite memristive diodes (memdiodes) that enable Bienenstock-Cooper-Munro learning rules capturing both timing- and rate-based plasticity. A triplet spike timing-dependent plasticity scheme exploiting ion migration, back diffusion, and modulable Schottky barriers establishes general design rules for realizing higher-order memristors. This higher order enables complex binocular orientation selectivity in neural networks exploiting the intrinsic physics of the devices, without the need for complicated circuitry.

摘要

随着计算需求的不断增加,基于零阶复杂度数字电路的冯·诺依曼架构中的串行处理在计算能力和功耗方面已经达到饱和,因此需要研究替代范式。受忆阻器启发的系统因其具有大规模并行性、低能耗和高容错性而备受关注。然而,迄今为止,大多数演示仅使用具有一阶动力学的器件模拟了原始的低阶生物复杂性。具有更高阶复杂性的忆阻器有望解决那些原本需要越来越复杂的电路才能解决的问题,但目前还没有通用的设计规则。在这里,我们在卤化物钙钛矿忆阻二极管(memdiodes)中展示了二阶动力学,这些忆阻器可以实现包含定时和基于速率的可塑性的 Bienenstock-Cooper-Munro 学习规则。利用离子迁移、反向扩散和可调节肖特基势垒的三重尖峰定时相关可塑性方案,为实现更高阶忆阻器建立了通用的设计规则。这种更高的阶数使神经网络能够利用器件的固有物理特性实现复杂的双目方向选择性,而无需复杂的电路。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b09/9788778/2bb9b9aa1c09/sciadv.ade0072-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b09/9788778/595e7d9d7a28/sciadv.ade0072-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b09/9788778/9bd5aae3538d/sciadv.ade0072-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b09/9788778/e314be75bcdb/sciadv.ade0072-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b09/9788778/152a9eaa9913/sciadv.ade0072-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b09/9788778/df130b237acb/sciadv.ade0072-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b09/9788778/2bb9b9aa1c09/sciadv.ade0072-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b09/9788778/595e7d9d7a28/sciadv.ade0072-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b09/9788778/9bd5aae3538d/sciadv.ade0072-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b09/9788778/e314be75bcdb/sciadv.ade0072-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b09/9788778/152a9eaa9913/sciadv.ade0072-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b09/9788778/df130b237acb/sciadv.ade0072-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b09/9788778/2bb9b9aa1c09/sciadv.ade0072-f6.jpg

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本文引用的文献

1
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ACS Energy Lett. 2022 Oct 14;7(10):3401-3414. doi: 10.1021/acsenergylett.2c01663. Epub 2022 Sep 24.
2
A Model for the Origin of Motion Direction Selectivity in Visual Cortex.运动方向选择性在视觉皮层起源的模型。
J Neurosci. 2021 Jan 6;41(1):89-102. doi: 10.1523/JNEUROSCI.1362-20.2020. Epub 2020 Nov 17.
3
Spatial connectivity matches direction selectivity in visual cortex.空间连通性与视觉皮层的方向选择性匹配。
用于突触器件和神经形态计算的磁离子学:最新进展、挑战及未来展望
Small Sci. 2024 Jul 4;4(10):2400133. doi: 10.1002/smsc.202400133. eCollection 2024 Oct.
4
Modulating Trapping in Low-Dimensional Lead-Tin Halides for Energy-Efficient Neuromorphic Electronics.用于节能神经形态电子学的低维铅锡卤化物中的调制俘获
Adv Mater. 2025 May;37(20):e2414430. doi: 10.1002/adma.202414430. Epub 2025 Mar 31.
5
Memristive Ion Dynamics to Enable Biorealistic Computing.忆阻离子动力学实现生物逼真计算。
Chem Rev. 2025 Jan 22;125(2):745-785. doi: 10.1021/acs.chemrev.4c00587. Epub 2024 Dec 27.
6
Insights of BDAPbI-Based Flexible Memristor for Artificial Synapses and In-Memory Computing.基于BDAPbI的用于人工突触和内存计算的柔性忆阻器的见解
ACS Omega. 2024 Nov 16;9(47):46841-46850. doi: 10.1021/acsomega.4c05529. eCollection 2024 Nov 26.
7
Advances in Metal Halide Perovskite Memristors: A Review from a Co-Design Perspective.金属卤化物钙钛矿忆阻器的进展:基于协同设计视角的综述
Adv Sci (Weinh). 2025 Jan;12(2):e2409291. doi: 10.1002/advs.202409291. Epub 2024 Nov 19.
8
Exploiting Spatial Ionic Dynamics in Solid-State Organic Electrochemical Transistors for Multi-Tactile Sensing and Processing.利用固态有机电化学晶体管中的空间离子动力学进行多触觉传感与处理
Adv Sci (Weinh). 2024 Nov;11(43):e2405902. doi: 10.1002/advs.202405902. Epub 2024 Sep 27.
9
Sustainable Mixed-Halide Perovskite Resistive Switching Memories Using Self-Assembled Monolayers as the Bottom Contact.使用自组装单分子层作为底部接触的可持续混合卤化物钙钛矿电阻式开关存储器。
J Phys Chem Lett. 2024 Aug 1;15(30):7635-7644. doi: 10.1021/acs.jpclett.4c01664. Epub 2024 Jul 22.
10
Understanding the Resistive Switching Behaviors of Top Electrode (Au, Cu, and Al)-Dependent TiO-Based Memristive Devices.理解基于顶部电极(金、铜和铝)的二氧化钛基忆阻器件的电阻开关行为。
ACS Omega. 2024 May 26;9(23):24601-24609. doi: 10.1021/acsomega.4c00320. eCollection 2024 Jun 11.
Nature. 2020 Dec;588(7839):648-652. doi: 10.1038/s41586-020-2894-4. Epub 2020 Nov 11.
4
Self healable neuromorphic memtransistor elements for decentralized sensory signal processing in robotics.用于机器人分散式传感信号处理的自修复神经形态记忆晶体管元件。
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5
Optogenetics inspired transition metal dichalcogenide neuristors for in-memory deep recurrent neural networks.受光遗传学启发的过渡金属二卤化物忆阻器用于内存中的深度递归神经网络。
Nat Commun. 2020 Jun 25;11(1):3211. doi: 10.1038/s41467-020-16985-0.
6
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7
Parallel programming of an ionic floating-gate memory array for scalable neuromorphic computing.离子浮栅存储器阵列的并行编程可实现可扩展的神经形态计算。
Science. 2019 May 10;364(6440):570-574. doi: 10.1126/science.aaw5581. Epub 2019 Apr 25.
8
Phase segregation due to ion migration in all-inorganic mixed-halide perovskite nanocrystals.离子迁移导致全无机混合卤化物钙钛矿纳米晶体相分离。
Nat Commun. 2019 Mar 6;10(1):1088. doi: 10.1038/s41467-019-09047-7.
9
Unravelling the role of vacancies in lead halide perovskite through electrical switching of photoluminescence.通过光致发光的电切换揭示卤铅钙钛矿中的空位作用。
Nat Commun. 2018 Nov 30;9(1):5113. doi: 10.1038/s41467-018-07571-6.
10
Ultralow Power Dual-Gated Subthreshold Oxide Neuristors: An Enabler for Higher Order Neuronal Temporal Correlations.超低功耗双栅亚阈值氧化物神经晶体管:实现高阶神经元时间相关性的推动者。
ACS Nano. 2018 Nov 27;12(11):11263-11273. doi: 10.1021/acsnano.8b05903. Epub 2018 Nov 5.