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基于异质结的高电子迁移率晶体管用于下一代生物传感器的现状与前景

Status and Prospects of Heterojunction-Based HEMT for Next-Generation Biosensors.

作者信息

Fauzi Najihah, Mohd Asri Rahil Izzati, Mohamed Omar Mohamad Faiz, Manaf Asrulnizam Abd, Kawarada Hiroshi, Falina Shaili, Syamsul Mohd

机构信息

Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia.

Collaborative Microelectronic Design Excellence Center (CEDEC), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia.

出版信息

Micromachines (Basel). 2023 Jan 27;14(2):325. doi: 10.3390/mi14020325.

DOI:10.3390/mi14020325
PMID:36838025
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9966278/
Abstract

High electron mobility transistor (HEMT) biosensors hold great potential for realizing label-free, real-time, and direct detection. Owing to their unique properties of two-dimensional electron gas (2DEG), HEMT biosensors have the ability to amplify current changes pertinent to potential changes with the introduction of any biomolecules, making them highly surface charge sensitive. This review discusses the recent advances in the use of AlGaN/GaN and AlGaAs/GaAs HEMT as biosensors in the context of different gate architectures. We describe the fundamental mechanisms underlying their operational functions, giving insight into crucial experiments as well as the necessary analysis and validation of data. Surface functionalization and biorecognition integrated into the HEMT gate structures, including self-assembly strategies, are also presented in this review, with relevant and promising applications discussed for ultra-sensitive biosensors. Obstacles and opportunities for possible optimization are also surveyed. Conclusively, future prospects for further development and applications are discussed. This review is instructive for researchers who are new to this field as well as being informative for those who work in related fields.

摘要

高电子迁移率晶体管（HEMT）生物传感器在实现无标记、实时和直接检测方面具有巨大潜力。由于其二维电子气（2DEG）的独特特性，HEMT生物传感器能够在引入任何生物分子时放大与电位变化相关的电流变化，使其对表面电荷高度敏感。本文综述了在不同栅极结构背景下，将AlGaN/GaN和AlGaAs/GaAs HEMT用作生物传感器的最新进展。我们描述了其操作功能背后的基本机制，深入探讨了关键实验以及数据的必要分析和验证。本文还介绍了集成到HEMT栅极结构中的表面功能化和生物识别，包括自组装策略，并讨论了其在超灵敏生物传感器中的相关且有前景的应用。还探讨了可能优化的障碍和机遇。最后，讨论了进一步发展和应用的未来前景。这篇综述对该领域的新手研究人员具有指导意义，对相关领域的工作人员也具有参考价值。

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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ef00/9966278/054f0c5eef43/micromachines-14-00325-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ef00/9966278/adb7768f8e6e/micromachines-14-00325-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ef00/9966278/a8b9704235b6/micromachines-14-00325-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ef00/9966278/a86042864865/micromachines-14-00325-g011.jpg
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