Lee Su Yeon, Seo Hyun Kyu, Jeong Se Yeon, Yang Min Kyu
Artificial Intelligence Convergence Research Laboratory, Sahmyook University, Seoul 01795, Republic of Korea.
Materials (Basel). 2023 Jun 11;16(12):4315. doi: 10.3390/ma16124315.
Hyper-field effect transistors (hyper-FETs) are crucial in the development of low-power logic devices. With the increasing significance of power consumption and energy efficiency, conventional logic devices can no longer achieve the required performance and low-power operation. Next-generation logic devices are designed based on complementary metal-oxide-semiconductor circuits, and the subthreshold swing of existing metal-oxide semiconductor field effect transistors (MOSFETs) cannot be reduced below 60 mV/dec at room temperature owing to the thermionic carrier injection mechanism in the source region. Therefore, new devices must be developed to overcome these limitations. In this study, we present a novel threshold switch (TS) material, which can be applied to logic devices by employing ovonic threshold switch (OTS) materials, failure control of insulator-metal transition materials, and structural optimization. The proposed TS material is connected to a FET device to evaluate its performance. The results demonstrate that commercial transistors connected in series with GeSeTe-based OTS devices exhibit significantly lower subthreshold swing values, high on/off current ratios, and high durability of up to 10.
超场效应晶体管（hyper-FET）在低功耗逻辑器件的发展中至关重要。随着功耗和能源效率的重要性日益增加，传统逻辑器件已无法实现所需的性能和低功耗运行。下一代逻辑器件基于互补金属氧化物半导体电路设计，由于源区的热电子载流子注入机制，现有金属氧化物半导体场效应晶体管（MOSFET）在室温下的亚阈值摆幅无法降低到60 mV/dec以下。因此，必须开发新器件来克服这些限制。在本研究中，我们提出了一种新型阈值开关（TS）材料，通过采用硫族化物阈值开关（OTS）材料、绝缘体-金属转变材料的失效控制和结构优化，可将其应用于逻辑器件。将所提出的TS材料连接到FET器件上以评估其性能。结果表明，与基于GeSeTe的OTS器件串联连接的商用晶体管表现出显著更低的亚阈值摆幅值、高的开/关电流比以及高达10的高耐久性。
