Li Xiaofeng, Wang Wanhai, Huang Pengyu, Yang Li, Hu Jianfei, Wei Kun, Gao Liang, Jiang Yonghe, Sun Kexuan, Du Guozheng, Cai Xuanyi, Liu Chang, Tang Weihua, Zhang Jinbao
College of Materials, Fujian Key Laboratory of Advanced Materials, Xiamen Key Laboratory of Electronic Ceramic Materials and Devices, Xiamen University, Xiamen, 361005, China.
Institute of Flexible Electronics (IFE, Future Technologies), College of Materials, Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province (IKKEM), Xiamen University, Xiamen, 361102, China.
Adv Sci (Weinh). 2024 Sep;11(36):e2403735. doi: 10.1002/advs.202403735. Epub 2024 Jul 23.
Naphthalene diimides (NDI) are widely serving as the skeleton to construct electron transport materials (ETMs) for optoelectronic devices. However, most of the reported NDI-based ETMs suffer from poor interfaces with the perovskite which deteriorates the carrier extraction and device stability. Here, a representative design concept for editing the peripheral groups of NDI molecules to achieve multifunctional properties is introduced. The resulting molecule 2,7-bis(2,2,3,3,4,4,4-heptafluorobutyl)benzo[lmn][3,8]phenanthroline-1,3,6,8(2H,7H)-tetraone (NDI-C4F) incorporated with hydrophobic fluorine units contributes to the prevention of excessive molecular aggregation, the improvement of surface wettability and the formation of strong chemical coordination with perovskite precursors. All these features favor retarding the perovskite crystallization and achieving superior buried interfaces, which subsequently promote charge collection and improve the structural compatibility between perovskite and ETMs. The corresponding PSCs based on low-temperature processed NDI-C4F yield a record efficiency of 23.21%, which is the highest reported value for organic ETMs in n-i-p PSCs. More encouragingly, the unencapsulated devices with NDI-C4F demonstrate extraordinary stability by retaining over 90% of their initial PCEs after 2600 h in air. This work provides an alternative molecular strategy to engineer the buried interfaces and can trigger further development of organic ETMs toward reliable PSCs.
萘二亚胺(NDI)被广泛用作构建光电器件电子传输材料(ETM)的骨架。然而,大多数已报道的基于NDI的ETM与钙钛矿的界面较差,这会降低载流子提取效率和器件稳定性。在此,介绍了一种通过编辑NDI分子的外围基团来实现多功能特性的代表性设计概念。所得分子2,7-双(2,2,3,3,4,4,4-七氟丁基)苯并[lmn][3,8]菲咯啉-1,3,6,8(2H,7H)-四酮(NDI-C4F)含有疏水氟单元,有助于防止分子过度聚集、改善表面润湿性以及与钙钛矿前驱体形成强化学配位。所有这些特性都有利于延缓钙钛矿结晶并实现优异的掩埋界面,进而促进电荷收集并改善钙钛矿与ETM之间的结构相容性。基于低温处理的NDI-C4F的相应PSC的效率达到了创纪录的23.21%,这是n-i-p型PSC中有机ETM报道的最高值。更令人鼓舞的是,具有NDI-C4F的未封装器件表现出非凡的稳定性,在空气中放置2600小时后仍保留其初始PCE的90%以上。这项工作提供了一种工程化掩埋界面的替代分子策略,并可推动有机ETM向可靠的PSC进一步发展。