Zuo Yonggang, Liu Can, Ding Liping, Qiao Ruixi, Tian Jinpeng, Liu Chang, Wang Qinghe, Xue Guodong, You Yilong, Guo Quanlin, Wang Jinhuan, Fu Ying, Liu Kehai, Zhou Xu, Hong Hao, Wu Muhong, Lu Xiaobo, Yang Rong, Zhang Guangyu, Yu Dapeng, Wang Enge, Bai Xuedong, Ding Feng, Liu Kaihui
State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China.
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
Nat Commun. 2022 Feb 23;13(1):1007. doi: 10.1038/s41467-022-28628-7.
The precise precursor supply is a precondition for controllable growth of two-dimensional (2D) transition metal dichalcogenides (TMDs). Although great efforts have been devoted to modulating the transition metal supply, few effective methods of chalcogen feeding control were developed. Here we report a strategy of using active chalcogen monomer supply to grow high-quality TMDs in a robust and controllable manner, e.g., MoS monolayers perform representative photoluminescent circular helicity of ~92% and electronic mobility of ~42 cmVs. Meanwhile, a uniform quaternary TMD alloy with three different anions, i.e., MoSSeTe, was accomplished. Our mechanism study revealed that the active chalcogen monomers can bind and diffuse freely on a TMD surface, which enables the effective nucleation, reaction, vacancy healing and alloy formation during the growth. Our work offers a degree of freedom for the controllable synthesis of 2D compounds and their alloys, benefiting the development of high-end devices with desired 2D materials.
精确的前驱体供应是二维（2D）过渡金属二硫属化物（TMD）可控生长的前提条件。尽管人们在调节过渡金属供应方面付出了巨大努力，但开发出的有效控制硫属元素供应的方法却很少。在此，我们报告一种利用活性硫属元素单体供应以稳健且可控的方式生长高质量TMD的策略，例如，MoS单层具有约92%的代表性光致发光圆偏振度和约42 cm²V⁻¹s⁻¹的电子迁移率。同时，还制备出了一种具有三种不同阴离子的均匀四元TMD合金，即MoSSeTe。我们的机理研究表明，活性硫属元素单体能够在TMD表面自由结合和扩散，这使得在生长过程中能够实现有效的成核、反应、空位修复和合金形成。我们的工作为二维化合物及其合金的可控合成提供了一定的自由度，有利于开发具有所需二维材料的高端器件。
