Sub-Boltzmann Switching, Hysteresis-Free Charge Modulated Negative Differential Resistance FinFET.

The ever-increasing power consumption in integrated circuits has raised concerns about the relentless doubling of transistor density in chips and cost drop per combinational/sequential circuits. To address the physical limit of thermionic emission carrier transport (i.e., subthreshold swing >60 mV/decade at 300 K), alternative charge-transport mechanisms or the implementation of functional substances have been attempted but without appreciable success. One such choice is to take advantage of negative differential resistance with the activation of localized electrons or migration of atom and oxygen vacancies to extend the capabilities of Si-transistors. However, inconsistency in current during forward/reverse bias sweep is confronted as a notable weak point. This work proposes an eye-catching solution to modulating potential distribution between a resistance switching layer and a transistor by employing charge trapping within a hafnium zirconium oxide layer. This approach introduces features advancing the potential of "More Moore" technologies.