Phùng Quỳnh Thị, Völkel Lukas, Piacentini Agata, Esteki Ardeshir, Grundmann Annika, Kalisch Holger, Heuken Michael, Vescan Andrei, Neumaier Daniel, Lemme Max C, Daus Alwin
Chair of Electronic Devices, RWTH Aachen University, 52074 Aachen, Germany.
Sensors Laboratory, Department of Microsystems Engineering, University of Freiburg, 79110 Freiburg, Germany.
ACS Appl Mater Interfaces. 2024 Nov 6;16(44):60541-60547. doi: 10.1021/acsami.4c13296. Epub 2024 Oct 25.
Tungsten diselenide (WSe) field-effect transistors (FETs) are promising for emerging electronics because of their tunable polarity, enabling complementary transistor technology, and their suitability for flexible electronics through material transfer. In this work, we demonstrate flexible p-type WSe FETs with absolute drain currents || up to 7 μA/μm. We achieve this by fabricating flexible top-gated FETs with a combined WSe and metal contact transfer approach using WSe grown by metal-organic chemical vapor deposition on sapphire. Despite moderate WSe crystal grain size, our devices show similar or higher || and on/off ratio (∼10) compared to most devices with exfoliated single-crystal WSe from the literature. We analyze charge trapping in our devices using pulsed and bias stress measurements. Notably, the high || values are preserved during pulsing, where charge trapping is minimized. Overall, we demonstrate a fabrication approach advantageous for high drain currents in flexible 2D transistors.
二硒化钨（WSe）场效应晶体管（FET）因其可调极性、可实现互补晶体管技术以及通过材料转移适用于柔性电子学，在新兴电子领域颇具前景。在这项工作中，我们展示了绝对漏极电流高达7 μA/μm的柔性p型WSe FET。我们通过使用金属有机化学气相沉积在蓝宝石上生长的WSe，采用WSe与金属接触转移相结合的方法制造柔性顶栅FET来实现这一目标。尽管WSe晶粒尺寸适中，但与文献中大多数使用剥离的单晶WSe制成的器件相比，我们的器件显示出相似或更高的漏极电流以及开/关比（约为10）。我们使用脉冲和偏置应力测量来分析器件中的电荷俘获。值得注意的是，在脉冲期间，电荷俘获最小化，高漏极电流值得以保留。总体而言，我们展示了一种有利于在柔性二维晶体管中实现高漏极电流的制造方法。
