Durmus Muhammed Taha, Bozkurt Ebru
Department of Nanoscience and Nanoengineering, Graduate School of Natural and Applied Sciences, Atatürk University, 25240, Erzurum, Turkey.
Program of Occupational Health and Safety, Vocational College of Technical Sciences, Atatürk University, 25240 Erzurum, Turkey.
Beilstein J Nanotechnol. 2024 Nov 7;15:1369-1375. doi: 10.3762/bjnano.15.110. eCollection 2024.
In this study, we aimed to synthesize new carbon dot structures (CDs) in a single step by using the plant for the first time and to contribute to the studies in the field of diode fabrication by using the new CDs. The CDs were obtained by hydrothermal synthesis, which is commonly used in the literature. TEM and zeta potential measurements were used to determine morphology and sizes of the CDs, and XRD, XPS, and FTIR and micro-Raman spectroscopy were used for structural characterization. Optical characterization of the CDs was done by absorption and steady-state fluorescence measurements. In the second part of the study, CDs were dripped onto silicon substrates, and a CDs thin film was formed by evaporation. A diode structure was obtained by evaporating gold with the shadow mask technique on the CDs film, and the current-voltage characteristics of this diode were examined. The synthesized CDs are spherical with an average size of 5.5 nm, have a negative surface charge and contain 73.3 atom % C, 24.0 atom % O, and 2.7 atom % N. The CDs exhibit fluorescence at approximately 394 nm. The layer thickness and bandgap energy of the prepared CDs film were calculated as 566 nm and 5.25 eV, respectively. The ideality factor and the measured barrier height (Φ) of the CDs-based Schottky diode were calculated as 9.1 and 0.364 eV, respectively. The CDs were used as semiconductor material in a Schottky diode, and the diode exhibited rectification behavior. The results obtained from this study showed that CDs can be applied in the field of electronics, apart from sensor studies, which are common application areas.
在本研究中，我们旨在首次利用植物一步合成新的碳点结构（CDs），并通过使用新的碳点为二极管制造领域的研究做出贡献。通过文献中常用的水热合成法获得了碳点。利用透射电子显微镜（TEM）和zeta电位测量来确定碳点的形态和尺寸，并使用X射线衍射（XRD）、X射线光电子能谱（XPS）、傅里叶变换红外光谱（FTIR）和显微拉曼光谱进行结构表征。通过吸收和稳态荧光测量对碳点进行光学表征。在研究的第二部分，将碳点滴涂在硅基板上，通过蒸发形成碳点薄膜。利用阴影掩膜技术在碳点薄膜上蒸发金得到二极管结构，并对该二极管的电流-电压特性进行了研究。合成的碳点呈球形，平均尺寸为5.5 nm，表面带负电荷，含有73.3原子%的C、24.0原子%的O和2.7原子%的N。碳点在约394 nm处发出荧光。制备的碳点薄膜的层厚度和带隙能量分别计算为566 nm和5.25 eV。基于碳点的肖特基二极管的理想因子和测量的势垒高度（Φ）分别计算为9.1和0.364 eV。碳点被用作肖特基二极管中的半导体材料，该二极管表现出整流行为。本研究获得的结果表明，除了常见的应用领域传感器研究外，碳点还可应用于电子领域。
