Liu Jun, Ning Chunmin, Liu Xiao, Zhu Sicong, Wang Shuling
Hubei Province Key Laboratory of Systems Science in Metallurgical Process, The State Key Laboratory for Refractories and Metallurgy, Collaborative Innovation Center for Advanced Steels, International Research Institute for Steel Technology, Wuhan University of Science and Technology, Wuhan 430081, China.
School of Mathematics and Physics Science and Engineering, Hebei University of Engineering, Handan 056038, China.
Nanomaterials (Basel). 2025 Jul 21;15(14):1129. doi: 10.3390/nano15141129.
An altermagnet, characterized by its distinctive magnetic properties, may hold potential applications in diverse fields such as magnetic materials, spintronics, data storage, and quantum computing. As a prototypical altermagnet, RuO exhibits spin polarization and demonstrates the advantageous characteristics of high electrical conductivity and low thermal conductivity. These exceptional properties endow it with considerable promise in the emerging field of thermal spintronics. We studied the electronic structure and thermoelectric properties of RuO; the constructed RuO/TiO/RuO all-antiferromagnetic tunnel junction (AFMTJ) exhibited thermally induced magnetoresistance (TIMR), reaching a maximum TIMR of 1756% at a temperature gradient of 5 K. Compared with prior studies on RuO-based antiferromagnetic tunnel junctions, the novelty of this work lies in the thermally induced magnetoresistance based on its superior thermoelectric properties. In parallel structures, the spin-down current dominates the transmission spectrum, whereas in antiparallel structures, the spin-up current governs the transmission spectrum, underscoring the spin-polarized thermal transport. In addition, thermoelectric efficiency emphasizes the potential of RuO to link antiferromagnetic robustness with ferromagnetic spin functionality. These findings promote the development of efficient spintronic devices and spin-based storage technology for waste heat recovery and emphasize the role of spin splitting in zero-magnetization systems.
交替磁体具有独特的磁特性，在磁性材料、自旋电子学、数据存储和量子计算等多个领域可能具有潜在应用。作为典型的交替磁体，RuO表现出自旋极化，并展现出高电导率和低导热率的优势特性。这些优异特性使其在新兴的热自旋电子学领域具有相当大的潜力。我们研究了RuO的电子结构和热电性质；构建的RuO/TiO/RuO全反铁磁隧道结（AFMTJ）表现出热致磁电阻（TIMR），在5K的温度梯度下达到最大TIMR为1756%。与先前对基于RuO的反铁磁隧道结的研究相比，这项工作的新颖之处在于基于其优异的热电性质的热致磁电阻。在平行结构中，自旋向下电流主导传输谱，而在反平行结构中，自旋向上电流控制传输谱，突出了自旋极化的热传输。此外，热电效率强调了RuO将反铁磁鲁棒性与铁磁自旋功能联系起来的潜力。这些发现推动了用于废热回收的高效自旋电子器件和基于自旋的存储技术的发展，并强调了自旋分裂在零磁化系统中的作用。
