Peter Grünberg Institute(PGI-8), Forschungszentrum Jülich , Jülich 52425, Germany.
Nano Lett. 2014 Jun 11;14(6):3504-9. doi: 10.1021/nl5010724. Epub 2014 May 13.
Trapping-detrapping processes in nanostructures are generally considered to be destabilizing factors. However, we discovered a positive role for a single trap in the registration and transformation of useful signal. We use switching kinetics of current fluctuations generated by a single trap in the dielectric of liquid-gated nanowire field effect transistors (FETs) as a basic principle for a novel highly sensitive approach to monitor the gate surface potential. An increase in Si nanowire FET sensitivity of 400% was demonstrated.
在纳米结构中，俘获-脱陷过程通常被认为是不稳定因素。然而，我们发现单个陷光阱在记录和转换有用信号方面起着积极的作用。我们利用液体门控纳米线场效应晶体管（FET）介电层中单个陷光阱产生的电流涨落的开关动力学，作为一种新的高灵敏度方法来监测栅极表面势的基本原理。实验证明，硅纳米线 FET 的灵敏度提高了 400%。
