Parks J W, Wall T A, Cai H, Hawkins A R, Schmidt H
School of Engineering, University of California Santa Cruz, Santa Cruz, CA 95064 USA.
Department of Electrical and Computer Engineering, Brigham Young University, Provo, UT 84602 USA.
IEEE J Sel Top Quantum Electron. 2016 Nov-Dec;22(6). doi: 10.1109/JSTQE.2016.2549801. Epub 2016 Apr 21.
Silicon-based optofluidic devices are very attractive for applications in biophotonics and chemical sensing. Understanding and controlling the properties of their dielectric waveguides is critical for the performance of these chips. We report that thermal annealing of PECVD-grown silicon dioxide (SiO) ridge waveguides results in considerable improvements to optical transmission and particle detection. There are two fundamental changes that yield higher optical transmission: (1) propagation loss in solid-core waveguides is reduced by over 70%, and (2) coupling efficiencies between solid- and liquid-core waveguides are optimized. The combined effects result in improved optical chip transmission by a factor of 100-1000 times. These improvements are shown to arise from the elimination of a high-index layer at the surface of the SiO caused by water absorption into the porous oxide. The effects of this layer on optical transmission and mode confinement are shown to be reversible by alternating subjection of waveguides to water and subsequent low temperature annealing. Finally, we show that annealing improves detection of fluorescent analytes in optofluidic chips with a signal-to-noise ratio improvement of 166x and a particle detection efficiency improvement of 94%.
硅基光流体器件在生物光子学和化学传感应用中极具吸引力。了解并控制其介质波导的特性对于这些芯片的性能至关重要。我们报道,对通过等离子体增强化学气相沉积(PECVD)生长的二氧化硅(SiO₂)脊形波导进行热退火,可显著改善光传输和颗粒检测性能。有两个基本变化带来了更高的光传输:(1)实心芯波导中的传播损耗降低了70%以上,(2)实心芯与液芯波导之间的耦合效率得到优化。综合效果使光学芯片的传输提高了100至1000倍。这些改进源于消除了由于多孔氧化物吸水导致的SiO₂表面的高折射率层。通过交替使波导接触水和随后进行低温退火,表明该层对光传输和模式限制的影响是可逆的。最后,我们表明退火改善了光流体芯片中荧光分析物的检测,信噪比提高了166倍,颗粒检测效率提高了94%。