Electrical and Computer Engineering Department, University of California, Santa Barbara, CA, 93106, USA.
Materials Department, University of California, Santa Barbara, CA, 93106, USA.
Sci Rep. 2017 Feb 14;7:42429. doi: 10.1038/srep42429.
Silicon (Si) based complementary metal-oxide semiconductor (CMOS) technology has been the driving force of the information-technology revolution. However, scaling of CMOS technology as per Moore's law has reached a serious bottleneck. Among the emerging technologies memristive devices can be promising for both memory as well as computing applications. Hybrid CMOS/memristor circuits with CMOL (CMOS + "Molecular") architecture have been proposed to combine the extremely high density of the memristive devices with the robustness of CMOS technology, leading to terabit-scale memory and extremely efficient computing paradigm. In this work, we demonstrate a hybrid 3D CMOL circuit with 2 layers of memristive crossbars monolithically integrated on a pre-fabricated CMOS substrate. The integrated crossbars can be fully operated through the underlying CMOS circuitry. The memristive devices in both layers exhibit analog switching behavior with controlled tunability and stable multi-level operation. We perform dot-product operations with the 2D and 3D memristive crossbars to demonstrate the applicability of such 3D CMOL hybrid circuits as a multiply-add engine. To the best of our knowledge this is the first demonstration of a functional 3D CMOL hybrid circuit.
基于硅的互补金属氧化物半导体 (CMOS) 技术一直是信息技术革命的推动力。然而，按照摩尔定律对 CMOS 技术进行缩放已经达到了严重的瓶颈。在新兴技术中，忆阻器器件在存储和计算应用方面都具有广阔的前景。具有 CMOL（CMOS + “分子”）架构的 CMOS/忆阻器混合电路已经被提出，以将忆阻器器件的极高密度与 CMOS 技术的鲁棒性结合起来，从而实现太位级的内存和极其高效的计算范例。在这项工作中，我们展示了一个具有两层忆阻器交叉结构的混合 3D CMOL 电路，这些交叉结构被完全集成在预制的 CMOS 衬底上。底层的 CMOS 电路可以完全控制集成交叉结构的操作。两个忆阻器层中的器件都表现出具有可控可调谐性和稳定多级操作的模拟开关行为。我们通过二维和三维忆阻器交叉结构执行点积运算，以证明这种 3D CMOL 混合电路作为乘法-累加引擎的适用性。据我们所知，这是第一个功能 3D CMOL 混合电路的演示。
