Liu Jin, Davanço Marcelo I, Sapienza Luca, Konthasinghe Kumarasiri, De Miranda Cardoso José Vinícius, Song Jin Dong, Badolato Antonio, Srinivasan Kartik
Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.
Department of Physics, University of South Florida, Tampa, Florida 33620, USA.
Rev Sci Instrum. 2017 Feb;88(2):023116. doi: 10.1063/1.4976578.
We report a photoluminescence imaging system for locating single quantum emitters with respect to alignment features. Samples are interrogated in a 4 K closed-cycle cryostat by a high numerical aperture (NA = 0.9, 100× magnification) objective that sits within the cryostat, enabling high efficiency collection of emitted photons without image distortions due to the cryostat windows. The locations of single InAs/GaAs quantum dots within a >50 μm × 50 μm field of view are determined with ≈4.5 nm uncertainty (one standard deviation) in a 1 s long acquisition. The uncertainty is determined through a combination of a maximum likelihood estimate for localizing the quantum dot emission, and a cross correlation method for determining the alignment mark center. This location technique can be an important step in the high-throughput creation of nanophotonic devices that rely upon the interaction of highly confined optical modes with single quantum emitters.
我们报道了一种用于确定单量子发射器相对于对准特征位置的光致发光成像系统。样品在4K闭循环低温恒温器中通过位于低温恒温器内的高数值孔径（NA = 0.9，100倍放大率）物镜进行探测，从而能够高效收集发射的光子，而不会因低温恒温器窗口导致图像失真。在大于50μm×50μm的视场内，单个InAs/GaAs量子点的位置在1秒长时间采集内以约4.5nm的不确定度（一个标准偏差）确定。该不确定度是通过用于定位量子点发射的最大似然估计和用于确定对准标记中心的互相关方法相结合来确定的。这种定位技术可能是高通量创建依赖于高度受限光学模式与单量子发射器相互作用的纳米光子器件的重要一步。
