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二维材料生长的外延

The epitaxy of 2D materials growth.

作者信息

Dong Jichen, Zhang Leining, Dai Xinyue, Ding Feng

机构信息

Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, Korea.

School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, Korea.

出版信息

Nat Commun. 2020 Nov 17;11(1):5862. doi: 10.1038/s41467-020-19752-3.

DOI:10.1038/s41467-020-19752-3
PMID:33203853
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7672100/
Abstract

Two dimensional (2D) materials consist of one to a few atomic layers, where the intra-layer atoms are chemically bonded and the atomic layers are weakly bonded. The high bonding anisotropicity in 2D materials make their growth on a substrate substantially different from the conventional thin film growth. Here, we proposed a general theoretical framework for the epitaxial growth of a 2D material on an arbitrary substrate. Our extensive density functional theory (DFT) calculations show that the propagating edge of a 2D material tends to align along a high symmetry direction of the substrate and, as a conclusion, the interplay between the symmetries of the 2D material and the substrate plays a critical role in the epitaxial growth of the 2D material. Based on our results, we have outlined that orientational uniformity of 2D material islands on a substrate can be realized only if the symmetry group of the substrate is a subgroup of that of the 2D material. Our predictions are in perfect agreement with most experimental observations on 2D materials' growth on various substrates known up to now. We believe that this general guideline will lead to the large-scale synthesis of wafer-scale single crystals of various 2D materials in the near future.

摘要

二维(2D)材料由一到几个原子层组成,其中层内原子通过化学键结合,而原子层之间则通过弱键结合。二维材料中高的键合各向异性使得它们在衬底上的生长与传统薄膜生长有很大不同。在此,我们提出了一个关于二维材料在任意衬底上外延生长的通用理论框架。我们广泛的密度泛函理论(DFT)计算表明,二维材料的生长边缘倾向于沿着衬底的高对称方向排列,因此,二维材料与衬底的对称性之间的相互作用在二维材料的外延生长中起着关键作用。基于我们的结果,我们概述了只有当衬底的对称群是二维材料对称群的子群时,才能实现二维材料岛在衬底上的取向均匀性。我们的预测与目前已知的关于二维材料在各种衬底上生长的大多数实验观察结果完全一致。我们相信,这一通用准则将在不久的将来促成各种二维材料的晶圆级单晶的大规模合成。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/240b/7672100/0c64ad0188fa/41467_2020_19752_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/240b/7672100/c2febc4a45a0/41467_2020_19752_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/240b/7672100/5a318fd3f5c9/41467_2020_19752_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/240b/7672100/9a74a25cc59f/41467_2020_19752_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/240b/7672100/9bf095a79208/41467_2020_19752_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/240b/7672100/0c64ad0188fa/41467_2020_19752_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/240b/7672100/c2febc4a45a0/41467_2020_19752_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/240b/7672100/5a318fd3f5c9/41467_2020_19752_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/240b/7672100/9a74a25cc59f/41467_2020_19752_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/240b/7672100/9bf095a79208/41467_2020_19752_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/240b/7672100/0c64ad0188fa/41467_2020_19752_Fig5_HTML.jpg

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1
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2
Epitaxial Growth of Centimeter-Scale Single-Crystal MoS Monolayer on Au(111).在Au(111)上厘米级单晶MoS单层的外延生长。
ACS Nano. 2020 Apr 28;14(4):5036-5045. doi: 10.1021/acsnano.0c01478. Epub 2020 Apr 13.
3
Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111).在 Cu(111)上的晶圆级单晶六方氮化硼单层。
基于二维材料的神经形态浮栅存储器。
Cyborg Bionic Syst. 2025 Apr 22;6:0256. doi: 10.34133/cbsystems.0256. eCollection 2025.
4
Physics of 2D Materials for Developing Smart Devices.用于开发智能设备的二维材料物理学
Nanomicro Lett. 2025 Mar 21;17(1):197. doi: 10.1007/s40820-024-01635-7.
5
Epitaxial Ferroelectric Hexagonal Boron Nitride Grown on Graphene.生长在石墨烯上的外延铁电六方氮化硼。
Adv Mater. 2025 Apr;37(15):e2414442. doi: 10.1002/adma.202414442. Epub 2025 Feb 21.
6
Two-dimensional Czochralski growth of single-crystal MoS.二维提拉法生长单晶二硫化钼。
Nat Mater. 2025 Feb;24(2):188-196. doi: 10.1038/s41563-024-02069-7. Epub 2025 Jan 10.
7
Epitaxy of Emerging Materials and Advanced Heterostructures for Microelectronics and Quantum Sciences.用于微电子和量子科学的新兴材料及先进异质结构的外延
Small Methods. 2025 Aug;9(8):e2401815. doi: 10.1002/smtd.202401815. Epub 2025 Jan 7.
8
Diffusion limited synthesis of wafer-scale covalent organic framework films for adaptative visual device.用于自适应视觉设备的晶圆级共价有机框架薄膜的扩散受限合成
Nat Commun. 2024 Dec 2;15(1):10487. doi: 10.1038/s41467-024-54844-4.
9
Van der Waals epitaxial growth of single-crystal molecular film.单晶分子膜的范德华外延生长
Natl Sci Rev. 2024 Oct 15;11(11):nwae358. doi: 10.1093/nsr/nwae358. eCollection 2024 Nov.
10
Reconstruction of Gold Surface with Excessive Sulfur Source During Transition Metal Disulfide Growth.过渡金属二硫化物生长过程中硫源过量时金表面的重构
Precis Chem. 2024 Jun 5;2(8):414-420. doi: 10.1021/prechem.4c00018. eCollection 2024 Aug 26.
Nature. 2020 Mar;579(7798):219-223. doi: 10.1038/s41586-020-2009-2. Epub 2020 Mar 4.
4
Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper.在铜上外延生长出 100 平方厘米的单晶六方氮化硼单层。
Nature. 2019 Jun;570(7759):91-95. doi: 10.1038/s41586-019-1226-z. Epub 2019 May 22.
5
Catalyst-Selective Growth of Single-Orientation Hexagonal Boron Nitride toward High-Performance Atomically Thin Electric Barriers.催化剂选择性生长单取向六方氮化硼以制备高性能原子级薄电屏障
Adv Mater. 2019 Jun;31(24):e1900880. doi: 10.1002/adma.201900880. Epub 2019 Apr 29.
6
Formation of Twinned Graphene Polycrystals.孪晶石墨烯多晶体的形成
Angew Chem Int Ed Engl. 2019 Jun 3;58(23):7723-7727. doi: 10.1002/anie.201902441. Epub 2019 May 8.
7
Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation.自准直晶粒形成的晶圆级单晶六方氮化硼薄膜。
Science. 2018 Nov 16;362(6416):817-821. doi: 10.1126/science.aau2132.
8
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