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用于片上异质材料集成的数字电化学

Digital Electrochemistry for On-Chip Heterogeneous Material Integration.

作者信息

Bao Bin, Rivkin Boris, Akbar Farzin, Karnaushenko Dmitriy D, Bandari Vineeth Kumar, Teuerle Laura, Becker Christian, Baunack Stefan, Karnaushenko Daniil, Schmidt Oliver G

机构信息

Institute for Integrative Nanosciences, Leibniz IFW Dresden, 01069, Dresden, Germany.

Material Systems for Nanoelectronics, Chemnitz University of Technology, 09107, Chemnitz, Germany.

出版信息

Adv Mater. 2021 Jul;33(26):e2101272. doi: 10.1002/adma.202101272. Epub 2021 May 24.

Abstract

Many modern electronic applications rely on functional units arranged in an active-matrix integrated on a single chip. The active-matrix allows numerous identical device pixels to be addressed within a single system. However, next-generation electronics requires heterogeneous integration of dissimilar devices, where sensors, actuators, and display pixels sense and interact with the local environment. Heterogeneous material integration allows the reduction of size, increase of functionality, and enhancement of performance; however, it is challenging since front-end fabrication technologies in microelectronics put extremely high demands on materials, fabrication protocols, and processing environments. To overcome the obstacle in heterogeneous material integration, digital electrochemistry is explored here, which site-selectively carries out electrochemical processes to deposit and address electroactive materials within the pixel array. More specifically, an amorphous indium-gallium-zinc oxide (a-IGZO) thin-film-transistor (TFT) active-matrix is used to address pixels within the matrix and locally control electrochemical reactions for material growth and actuation. The digital electrochemistry procedure is studied in-depth by using polypyrrole (PPy) as a model material. Active-matrix-driven multicolored electrochromic patterns and actuator arrays are fabricated to demonstrate the capabilities of this approach for material integration. The approach can be extended to a broad range of materials and structures, opening up a new path for advanced heterogeneous microsystem integration.

摘要

许多现代电子应用依赖于排列在集成于单个芯片上的有源矩阵中的功能单元。有源矩阵允许在单个系统内寻址众多相同的器件像素。然而,下一代电子学需要不同器件的异构集成,其中传感器、致动器和显示像素能够感知并与局部环境相互作用。异构材料集成能够减小尺寸、增加功能并提高性能;然而,这具有挑战性,因为微电子学中的前端制造技术对材料、制造协议和处理环境提出了极高的要求。为了克服异构材料集成中的障碍,本文探索了数字电化学,它能够在像素阵列内进行位点选择性的电化学过程,以沉积和寻址电活性材料。更具体地说,非晶铟镓锌氧化物(a-IGZO)薄膜晶体管(TFT)有源矩阵用于寻址矩阵内的像素,并局部控制用于材料生长和驱动的电化学反应。以聚吡咯(PPy)作为模型材料对数字电化学过程进行了深入研究。制备了有源矩阵驱动的多色电致变色图案和致动器阵列,以展示这种材料集成方法的能力。该方法可扩展到广泛的材料和结构,为先进的异构微系统集成开辟了一条新途径。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/57b5/11469128/1d7174bde3c4/ADMA-33-2101272-g001.jpg

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