Department of Electrical and Information Technology, Lund University, 221 00 Lund, Sweden.
ACS Appl Mater Interfaces. 2023 Apr 19;15(15):19085-19091. doi: 10.1021/acsami.2c21669. Epub 2023 Apr 7.
Memristors implemented as resistive random-access memories (RRAMs) owing to their low power consumption, scalability, and speed are promising candidates for in-memory computing and neuromorphic applications. Moreover, a vertical 3D implementation of RRAMs enables high-density crossbar arrays at a minimal footprint. Co-integrated III-V vertical gate-all-around MOSFET selectors in a one-transistor-one-resistor (1T1R) configuration have recently been demonstrated where an interlayer (IL)-oxide has been shown to enable high RRAM endurance needed for applications like machine learning. In this work, we evaluate the role of the IL-oxide directly on InAs vertical nanowires using low-frequency noise characterization. We show that the low-frequency noise or the 1/-noise in InAs vertical RRAMs can be reduced by more than 3 orders of magnitude by engineering the InAs/high- interface. We also report that the noise properties of the vertical 1T1R do not degrade significantly after RRAM integration making them attractive to be used in emerging electronic circuits.
由于其低功耗、可扩展性和速度，作为电阻式随机存取存储器 (RRAM) 的忆阻器是用于内存计算和神经形态应用的有前途的候选者。此外，RRAM 的垂直 3D 实现可以在最小的占地面积上实现高密度的交叉点阵列。最近已经展示了在一个晶体管一个电阻器 (1T1R) 配置中共同集成 III-V 垂直栅全环绕 MOSFET 选择器，其中已经证明层间 (IL)-氧化物能够实现机器学习等应用所需的高 RRAM 耐久性。在这项工作中，我们使用低频噪声特性评估 IL-氧化物对 InAs 垂直纳米线的直接作用。我们表明，通过工程化 InAs/高界面，可以将 InAs 垂直 RRAM 中的低频噪声或 1/-噪声降低 3 个数量级以上。我们还报告说，垂直 1T1R 的噪声特性在 RRAM 集成后不会明显恶化，这使得它们在新兴电子电路中很有吸引力。
