Kong Lingan, Liu Hao, Wang Xiaowei, Abbas Aumber, Tang Lei, Han Mengjiao, Li Wenbo, Lu Zheyi, Lu Donglin, Ma Xiuliang, Liu Yuan, Liang Qijie
Songshan Lake Materials Laboratory, University Innovation Park, Dongguan 523808, China.
Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China.
Nano Lett. 2024 Sep 4;24(35):10949-10956. doi: 10.1021/acs.nanolett.4c02848. Epub 2024 Aug 26.
Creating high-quality contacts between high-melting-point metals and delicate two-dimensional (2D) semiconductors poses a critical challenge to polarity control due to inevitable chemical disorder and Fermi-level pinning observed in the contact regions. Here, we report a van der Waals (vdW) integration strategy to precisely tailor the WSe polarity by meticulously modulating metal contact compositions. Controlling the low-melting-point bismuth (Bi) thickness effectively modulates the Bi/Au dominant contact with WSe. This facilitates the precise polarity transformation between n-type, ambipolar, and p-type, with exceptional field-effect mobilities of 200 cm V s for electrons and 136 cm V s for holes. Within this vdW geometry, we further demonstrate the fundamental electrical components such as diodes and complementary inverters with enhanced rectification ratios and voltage gains. Our results showcase an effective and compatible with mass manufacturing method for precise polarity modulation of 2D semiconductors, providing a promising pathway toward large-scale high-performance 2D electronics and integrated circuits.
由于在接触区域中不可避免地存在化学无序和费米能级钉扎现象，在高熔点金属与脆弱的二维（2D）半导体之间创建高质量接触对极性控制构成了重大挑战。在此，我们报告了一种范德华（vdW）集成策略，通过精心调节金属接触成分来精确调整WSe的极性。控制低熔点铋（Bi）的厚度可有效调节Bi/Au与WSe的主导接触。这有助于在n型、双极性和p型之间实现精确的极性转变，电子的场效应迁移率高达200 cm² V⁻¹ s⁻¹，空穴的场效应迁移率为136 cm² V⁻¹ s⁻¹。在这种vdW几何结构中，我们进一步展示了诸如二极管和互补反相器等基本电子元件，其具有增强的整流比和电压增益。我们的结果展示了一种有效且与大规模制造方法兼容的用于2D半导体精确极性调制的方法，为大规模高性能2D电子学和集成电路提供了一条有前景的途径。
