Dick Kimberly A, Kodambaka Suneel, Reuter Mark C, Deppert Knut, Samuelson Lars, Seifert Werner, Wallenberg L Reine, Ross Frances M
Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden.
Nano Lett. 2007 Jun;7(6):1817-22. doi: 10.1021/nl0705900. Epub 2007 May 10.
We present an extensive investigation of the epitaxial growth of Au-assisted axial heterostructure nanowires composed of group IV and III-V materials and derive a model to explain the overall morphology of such wires. By analogy with 2D epitaxial growth, this model relates the wire morphology (i.e., whether it is kinked or straight) to the relationship of the interface energies between the two materials and the particle. This model suggests that, for any pair of materials, it should be easier to form a straight wire with one interface direction than the other, and we demonstrate this for the material combinations presented here. However, such factors as kinetics and the use of surfactants may permit the growth of straight double heterostructure nanowires. Finally, we demonstrate that branched nanowire heterostructures, also known as nanotrees, can be successfully explained by the same model.
我们对由IV族和III-V族材料组成的金辅助轴向异质结构纳米线的外延生长进行了广泛研究，并推导了一个模型来解释此类纳米线的整体形态。通过与二维外延生长类比，该模型将纳米线形态（即其是否有扭结或笔直）与两种材料和颗粒之间的界面能关系联系起来。该模型表明，对于任何一对材料，沿一个界面方向形成笔直纳米线应比另一个方向更容易，并且我们在此处给出的材料组合中证明了这一点。然而，诸如动力学和表面活性剂的使用等因素可能会促使笔直的双异质结构纳米线生长。最后，我们证明分支纳米线异质结构（也称为纳米树）也可以用同一模型成功解释。
