1] Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720, USA [2].
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720, USA.
Nat Commun. 2014 Jul 7;5:4325. doi: 10.1038/ncomms5325.
Harnessing light with photonic circuits promises to catalyse powerful new technologies much like electronic circuits have in the past. Analogous to Moore's law, complexity and functionality of photonic integrated circuits depend on device size and performance scale. Semiconductor nanostructures offer an attractive approach to miniaturize photonics. However, shrinking photonics has come at great cost to performance, and assembling such devices into functional photonic circuits has remained an unfulfilled feat. Here we demonstrate an on-chip optical link constructed from InGaAs nanoresonators grown directly on a silicon substrate. Using nanoresonators, we show a complete toolkit of circuit elements including light emitters, photodetectors and a photovoltaic power supply. Devices operate with gigahertz bandwidths while consuming subpicojoule energy per bit, vastly eclipsing performance of prior nanostructure-based optoelectronics. Additionally, electrically driven stimulated emission from an as-grown nanostructure is presented for the first time. These results reveal a roadmap towards future ultradense nanophotonic integrated circuits.
用光导电路来驾驭光线有望催生出强大的新技术，就像电子电路在过去所做的那样。类似于摩尔定律，光子集成电路的复杂性和功能取决于器件的尺寸和性能规模。半导体纳米结构为小型化光子学提供了一种有吸引力的方法。然而，光子学的缩小是以性能为代价的，而且将这些器件组装成功能齐全的光子电路仍然是一项尚未实现的壮举。在这里，我们展示了一个由直接生长在硅衬底上的 InGaAs 纳米谐振器构成的片上光学链路。我们使用纳米谐振器展示了一整套电路元件，包括发光器、光电探测器和光伏电源。这些器件的工作带宽为千兆赫，每个比特消耗的能量小于皮焦耳，大大超过了先前基于纳米结构的光电技术的性能。此外，首次展示了从生长的纳米结构中电驱动的受激辐射。这些结果为未来的超密集纳米光子集成电路铺平了道路。
