Carey Patrick H, Ren Fan, Jia Ziqi, Batich Christopher D, Camargo Samira E A, Clark Arthur E, Craciun Valentin, Neal Daniel W, Esquivel-Upshaw Josephine F
Department of Chemical Engineering, University of Florida, Gainesville, FL.
Department of Materials Science and Engineering, University of Florida, Gainesville, FL.
ChemistrySelect. 2019 Aug 23;4(31):9185-9189. doi: 10.1002/slct.201901001. Epub 2019 Aug 19.
The formation and characterization of positively surface charged TiN surfaces were investigated for improving dental implant survival. Surface nitrogen atoms of a traditional TiN implant were converted to a positive charge by a quaternization reaction which greatly increased the antibacterial efficiency. Ti, TiN, and quaternized TiN samples were incubated with human patient subgingival bacteria for 4 hours at 37°C in an anaerobic environment with an approximate 40% reduction in counts on the quaternized surface over traditional Ti and TiN. The samples were challenged with and fluorescent imaging confirmed significant reduction in the quaternized TiN over the traditional Ti and TiN. Contact angle measurement and X-Ray Photoelectron Spectroscopy (XPS) were utilized to confirm the surface chemistry changes. The XPS results found the charged quaternized nitrogen peak at 399.75 eV that is unique to the quaternized sample.
为提高牙种植体的存活率,对带正电荷的TiN表面的形成及特性进行了研究。通过季铵化反应将传统TiN种植体的表面氮原子转化为正电荷,这大大提高了抗菌效率。将Ti、TiN和季铵化TiN样品在37°C的厌氧环境中与人类患者的龈下细菌一起培养4小时,与传统Ti和TiN相比,季铵化表面的细菌数量减少了约40%。对样品进行挑战,荧光成像证实季铵化TiN相对于传统Ti和TiN有显著减少。利用接触角测量和X射线光电子能谱(XPS)来确认表面化学变化。XPS结果发现,季铵化样品特有的带电荷的季铵化氮峰位于399.75 eV。