• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

通过拆解和重新组装范德华异质结构实现的可重构电子器件。

Reconfigurable electronics by disassembling and reassembling van der Waals heterostructures.

作者信息

Tao Quanyang, Wu Ruixia, Li Qianyuan, Kong Lingan, Chen Yang, Jiang Jiayang, Lu Zheyi, Li Bailing, Li Wanying, Li Zhiwei, Liu Liting, Duan Xidong, Liao Lei, Liu Yuan

机构信息

Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China.

State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China.

出版信息

Nat Commun. 2021 Mar 23;12(1):1825. doi: 10.1038/s41467-021-22118-y.

DOI:10.1038/s41467-021-22118-y
PMID:33758200
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7988143/
Abstract

Van der Waals heterostructures (vdWHs) have attracted tremendous interest owing to the ability to assemble diverse building blocks without the constraints of lattice matching and processing compatibility. However, once assembled, the fabricated vdWHs can hardly be separated into individual building blocks for further manipulation, mainly due to technical difficulties in the disassembling process. Here, we show a method to disassemble the as-fabricated vdWHs into individual building blocks, which can be further reassembled into new vdWHs with different device functionalities. With this technique, we demonstrate reconfigurable transistors from n-type to p-type and back-gate to dual-gate structures through re-stacking. Furthermore, reconfigurable device behaviors from floating gate memory to Schottky diode and reconfigurable anisotropic Raman behaviors have been obtained through layer re-sequencing and re-twisting, respectively. Our results could lead to a reverse engineering concept of disassembled vdWHs electronics in parallel with state-of-the-art vdWHs electronics, offering a general method for multi-functional pluggable electronics and optoelectronics with limited material building blocks.

摘要

范德华异质结构(vdWHs)因其能够在不受晶格匹配和工艺兼容性限制的情况下组装各种构建块而引起了极大的关注。然而,一旦组装完成,制造好的vdWHs很难分离成单个构建块进行进一步操作,这主要是由于拆卸过程中的技术困难。在这里,我们展示了一种将制造好的vdWHs拆卸成单个构建块的方法,这些构建块可以进一步重新组装成具有不同器件功能的新vdWHs。通过这种技术,我们展示了通过重新堆叠从n型到p型以及从背栅到双栅结构的可重构晶体管。此外,分别通过层重新排序和重新扭转,获得了从浮栅存储器到肖特基二极管的可重构器件行为以及可重构各向异性拉曼行为。我们的结果可能会导致与先进的vdWHs电子学并行的拆卸vdWHs电子学的逆向工程概念,为具有有限材料构建块的多功能可插拔电子学和光电子学提供一种通用方法。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2dd4/7988143/d5722754db28/41467_2021_22118_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2dd4/7988143/f05dd2bfc6cb/41467_2021_22118_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2dd4/7988143/56f1cc611c70/41467_2021_22118_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2dd4/7988143/5661ae320329/41467_2021_22118_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2dd4/7988143/d5722754db28/41467_2021_22118_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2dd4/7988143/f05dd2bfc6cb/41467_2021_22118_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2dd4/7988143/56f1cc611c70/41467_2021_22118_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2dd4/7988143/5661ae320329/41467_2021_22118_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2dd4/7988143/d5722754db28/41467_2021_22118_Fig4_HTML.jpg

相似文献

1
Reconfigurable electronics by disassembling and reassembling van der Waals heterostructures.通过拆解和重新组装范德华异质结构实现的可重构电子器件。
Nat Commun. 2021 Mar 23;12(1):1825. doi: 10.1038/s41467-021-22118-y.
2
Interfacial Interactions in van der Waals Heterostructures of MoS and Graphene.范德华异质结构中 MoS 和石墨烯的界面相互作用。
ACS Nano. 2017 Nov 28;11(11):11714-11723. doi: 10.1021/acsnano.7b07015. Epub 2017 Oct 31.
3
Configuration-dependent anti-ambipolar van der Waals p-n heterostructures based on pentacene single crystal and MoS.基于并五苯单晶和 MoS 的依赖构型的反双极型范德瓦尔斯 p-n 异质结
Nanoscale. 2017 Jun 8;9(22):7519-7525. doi: 10.1039/c7nr01822c.
4
Photomodulation of Charge Transport in All-Semiconducting 2D-1D van der Waals Heterostructures with Suppressed Persistent Photoconductivity Effect.具有抑制的持久光电导效应的全半导体二维-一维范德华异质结构中电荷传输的光调制
Adv Mater. 2020 Jul;32(26):e2001268. doi: 10.1002/adma.202001268. Epub 2020 May 6.
5
Temperature-Dependent and Gate-Tunable Rectification in a Black Phosphorus/WS van der Waals Heterojunction Diode.温度相关和栅极可调的黑磷/WS 范德华异质结二极管整流
ACS Appl Mater Interfaces. 2018 Apr 18;10(15):13150-13157. doi: 10.1021/acsami.8b00058. Epub 2018 Apr 5.
6
Controllable Preparation of 2D Vertical van der Waals Heterostructures and Superlattices for Functional Applications.用于功能应用的二维垂直范德华异质结构和超晶格的可控制备
Small. 2022 Jun;18(22):e2107059. doi: 10.1002/smll.202107059. Epub 2022 Mar 17.
7
Reconfigurable van der Waals Heterostructured Devices with Metal-Insulator Transition.具有金属-绝缘体转变的可重构范德瓦尔斯异质结构器件。
Nano Lett. 2016 Nov 9;16(11):6746-6754. doi: 10.1021/acs.nanolett.6b02199. Epub 2016 Oct 5.
8
Tunable Schottky barrier in Janus-Ga/Graphene (/ = S, Se, Te;≠) van der Waals heterostructures.Janus-Ga/石墨烯(/ = S、Se、Te;≠ )范德华异质结构中的可调肖特基势垒
Nanotechnology. 2022 Jul 28;33(42). doi: 10.1088/1361-6528/ac800d.
9
Strain Switching in van der Waals Heterostructures Triggered by a Spin-Crossover Metal-Organic Framework.由自旋交叉金属有机框架引发的范德华异质结构中的应变切换
Adv Mater. 2022 Mar;34(11):e2110027. doi: 10.1002/adma.202110027. Epub 2022 Feb 4.
10
Reconfigurable Tunneling Transistors Heterostructured by an Individual Carbon Nanotube and MoS.由单个碳纳米管和二硫化钼异质结构而成的可重构隧道晶体管
Nano Lett. 2021 Aug 25;21(16):6843-6850. doi: 10.1021/acs.nanolett.1c01833. Epub 2021 Aug 4.

引用本文的文献

1
Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO Layers.基于二维氧化钼层的多位电阻式随机存取存储器。
Nanomaterials (Basel). 2025 Jul 3;15(13):1033. doi: 10.3390/nano15131033.
2
Molecular-scale in-operando reconfigurable electronic hardware.分子尺度的原位可重构电子硬件。
Nanoscale Horiz. 2025 Jan 27;10(2):349-358. doi: 10.1039/d4nh00211c.
3
High-density vertical sidewall MoS transistors through T-shape vertical lamination.通过T形垂直层压工艺制备的高密度垂直侧壁MoS晶体管。

本文引用的文献

1
Versatile construction of van der Waals heterostructures using a dual-function polymeric film.利用双功能聚合物薄膜实现范德华异质结构的多功能构建。
Nat Commun. 2020 Jun 15;11(1):3029. doi: 10.1038/s41467-020-16817-1.
2
Efficient strain modulation of 2D materials via polymer encapsulation.通过聚合物封装实现二维材料的高效应变调制
Nat Commun. 2020 Mar 2;11(1):1151. doi: 10.1038/s41467-020-15023-3.
3
Direct observation of van der Waals stacking-dependent interlayer magnetism.直接观察范德华堆积依赖的层间磁性。
Nat Commun. 2024 Jul 10;15(1):5774. doi: 10.1038/s41467-024-50185-4.
4
Interface Engineering Modulated Valley Polarization in MoS/BN Heterostructure.界面工程调控MoS/BN异质结构中的谷极化
Nanomaterials (Basel). 2023 Feb 25;13(5):861. doi: 10.3390/nano13050861.
5
Robotic Manipulation under Harsh Conditions Using Self-Healing Silk-Based Iontronics.恶劣条件下基于自修复丝基离子电子学的机器人操控。
Adv Sci (Weinh). 2022 Jan;9(2):e2102596. doi: 10.1002/advs.202102596. Epub 2021 Nov 5.
Science. 2019 Nov 22;366(6468):983-987. doi: 10.1126/science.aav1937.
4
Van der Waals Heterostructures for High-Performance Device Applications: Challenges and Opportunities.用于高性能器件应用的范德华异质结构:挑战与机遇
Adv Mater. 2020 Jul;32(27):e1903800. doi: 10.1002/adma.201903800. Epub 2019 Oct 14.
5
Probing van der Waals interactions at two-dimensional heterointerfaces.探测二维异质界面处的范德华相互作用。
Nat Nanotechnol. 2019 Jun;14(6):567-572. doi: 10.1038/s41565-019-0405-2. Epub 2019 Mar 25.
6
Van der Waals integration before and beyond two-dimensional materials.范德华集成前和二维材料之后。
Nature. 2019 Mar;567(7748):323-333. doi: 10.1038/s41586-019-1013-x. Epub 2019 Mar 20.
7
Resonantly hybridized excitons in moiré superlattices in van der Waals heterostructures.范德华异质结构中莫尔超晶格中的共振杂化激子。
Nature. 2019 Mar;567(7746):81-86. doi: 10.1038/s41586-019-0986-9. Epub 2019 Mar 6.
8
Evidence for moiré excitons in van der Waals heterostructures.范德华异质结构中莫尔激子的证据。
Nature. 2019 Mar;567(7746):71-75. doi: 10.1038/s41586-019-0975-z. Epub 2019 Feb 25.
9
Signatures of moiré-trapped valley excitons in MoSe/WSe heterobilayers.MoSe₂/WSe₂异质双层中莫尔捕获谷激子的特征
Nature. 2019 Mar;567(7746):66-70. doi: 10.1038/s41586-019-0957-1. Epub 2019 Feb 25.
10
Observation of moiré excitons in WSe/WS heterostructure superlattices.WSe/WS异质结构超晶格中莫尔激子的观测
Nature. 2019 Mar;567(7746):76-80. doi: 10.1038/s41586-019-0976-y. Epub 2019 Feb 25.