Pal Koustav, Dey Suman, Alam Aftab, Das I
Saha Institute of Nuclear Physics, A CI of Homi Bhabha National Institute, Kolkata, 700064, India.
Department of Physics, Indian Institute of Technology Bombay, Mumbai, 400076, India.
Sci Rep. 2024 Dec 28;14(1):30678. doi: 10.1038/s41598-024-76130-5.
Antiferromagnetic materials offer potential for spintronic applications due to their resilience to magnetic field perturbations and lack of stray fields. Achieving exchange bias in these materials is crucial for certain applications; however, discovering such materials remains challenging due to their compensated spin structure. The quest for antiferromagnetic materials with exchange bias became a reality through our experimental study and theoretical simulation on and . This study also unveils the impact of ionic disorder and lattice distortion on magnetic properties. The presence of exchange bias in both materials, given their antiferromagnetic nature, is intriguing. This study opens up new avenues for achieving exchange bias in spin-compensated systems, offering potential for low power and ultra fast antiferromagnetic spintronic applications in future research endeavors.
反铁磁材料由于其对磁场扰动的抗性和无杂散场的特性,在自旋电子学应用中具有潜力。在这些材料中实现交换偏置对于某些应用至关重要;然而,由于它们的自旋结构被补偿,发现此类材料仍然具有挑战性。通过我们对[具体材料1]和[具体材料2]的实验研究和理论模拟,寻找具有交换偏置的反铁磁材料成为了现实。这项研究还揭示了离子无序和晶格畸变对磁性能的影响。鉴于这两种材料的反铁磁性质,它们中存在交换偏置这一点很有趣。这项研究为在自旋补偿系统中实现交换偏置开辟了新途径,为未来研究中低功耗和超快反铁磁自旋电子学应用提供了潜力。