• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

用开尔文探针力显微镜研究过渡金属二硫属化物单层与金属电极界面处的能级对齐。

Energy-Level Alignment at Interfaces between Transition-Metal Dichalcogenide Monolayers and Metal Electrodes Studied with Kelvin Probe Force Microscopy.

作者信息

Markeev Pavel A, Najafidehaghani Emad, Gan Ziyang, Sotthewes Kai, George Antony, Turchanin Andrey, de Jong Michel P

机构信息

MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The Netherlands.

Institute of Physical Chemistry, Abbe Center of Photonics, Friedrich Schiller University, 07743 Jena, Germany.

出版信息

J Phys Chem C Nanomater Interfaces. 2021 Jun 24;125(24):13551-13559. doi: 10.1021/acs.jpcc.1c01612. Epub 2021 Jun 10.

DOI:10.1021/acs.jpcc.1c01612
PMID:34239657
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8237262/
Abstract

We studied the energy-level alignment at interfaces between various transition-metal dichalcogenide (TMD) monolayers, MoS, MoSe, WS, and WSe, and metal electrodes with different work functions (WFs). TMDs were deposited on SiO/silicon wafers by chemical vapor deposition and transferred to Al and Au substrates, with significantly different WFs to identify the metal-semiconductor junction behavior: oxide-terminated Al (natural oxidation) and Au (UV-ozone oxidation) with a WF difference of 0.8 eV. Kelvin probe force microscopy was employed for this study, based on which electronic band diagrams for each case were determined. We observed the Fermi-level pinning for MoS, while WSe/metal junctions behaved according to the Schottky-Mott limit. WS and MoSe exhibited intermediate behavior.

摘要

我们研究了各种过渡金属二硫属化物(TMD)单层(MoS、MoSe、WS和WSe)与具有不同功函数(WF)的金属电极之间界面处的能级对准情况。通过化学气相沉积将TMD沉积在SiO/硅片上,并转移到功函数差异显著的Al和Au衬底上,以识别金属-半导体结行为:具有0.8 eV功函数差异的氧化物终止的Al(自然氧化)和Au(紫外臭氧氧化)。本研究采用开尔文探针力显微镜,据此确定了每种情况下的电子能带图。我们观察到MoS的费米能级钉扎现象,而WSe/金属结的行为符合肖特基-莫特极限。WS和MoSe表现出中间行为。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1888/8237262/5aca79e05303/jp1c01612_0010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1888/8237262/b5712e22d6d8/jp1c01612_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1888/8237262/797b9f679e12/jp1c01612_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1888/8237262/4d1ff34e6b56/jp1c01612_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1888/8237262/53f38f6fe44e/jp1c01612_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1888/8237262/3f41605a2cd2/jp1c01612_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1888/8237262/79a3dd75a519/jp1c01612_0007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1888/8237262/d4deb437cd22/jp1c01612_0008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1888/8237262/e9abc391f62c/jp1c01612_0009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1888/8237262/5aca79e05303/jp1c01612_0010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1888/8237262/b5712e22d6d8/jp1c01612_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1888/8237262/797b9f679e12/jp1c01612_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1888/8237262/4d1ff34e6b56/jp1c01612_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1888/8237262/53f38f6fe44e/jp1c01612_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1888/8237262/3f41605a2cd2/jp1c01612_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1888/8237262/79a3dd75a519/jp1c01612_0007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1888/8237262/d4deb437cd22/jp1c01612_0008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1888/8237262/e9abc391f62c/jp1c01612_0009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1888/8237262/5aca79e05303/jp1c01612_0010.jpg

相似文献

1
Energy-Level Alignment at Interfaces between Transition-Metal Dichalcogenide Monolayers and Metal Electrodes Studied with Kelvin Probe Force Microscopy.用开尔文探针力显微镜研究过渡金属二硫属化物单层与金属电极界面处的能级对齐。
J Phys Chem C Nanomater Interfaces. 2021 Jun 24;125(24):13551-13559. doi: 10.1021/acs.jpcc.1c01612. Epub 2021 Jun 10.
2
Experimental Determination of the Ionization Energies of MoSe, WS, and MoS on SiO Using Photoemission Electron Microscopy.使用光电发射电子显微镜测定 MoSe、WS 和 MoS 在 SiO 上的离化能。
ACS Nano. 2017 Aug 22;11(8):8223-8230. doi: 10.1021/acsnano.7b03242. Epub 2017 Jul 19.
3
Role of Chalcogen Defect Introducing Metal-Induced Gap States and Its Implications for Metal-TMDs' Interface Chemistry.硫族元素缺陷引入金属诱导能隙态的作用及其对金属-过渡金属二硫属化物界面化学的影响。
ACS Omega. 2023 Mar 9;8(11):10176-10184. doi: 10.1021/acsomega.2c07489. eCollection 2023 Mar 21.
4
Interface Chemistry and Band Alignment Study of Ni and Ag Contacts on MoS.MoS上Ni和Ag接触的界面化学与能带对准研究
ACS Appl Mater Interfaces. 2021 Apr 7;13(13):15802-15810. doi: 10.1021/acsami.0c22476. Epub 2021 Mar 25.
5
Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures.半导体过渡金属二硫属化物及异质结构的导电原子力显微镜
Nanomaterials (Basel). 2020 Apr 22;10(4):803. doi: 10.3390/nano10040803.
6
Engineering of Nanoscale Heterogeneous Transition Metal Dichalcogenide-Au Interfaces.纳米级异质过渡金属二硫属化物-金界面的工程设计
Nano Lett. 2023 Apr 12;23(7):2792-2799. doi: 10.1021/acs.nanolett.3c00080. Epub 2023 Apr 3.
7
Gate-Tunable Graphene-WSe Heterojunctions at the Schottky-Mott Limit.肖特基-莫特极限下的栅极可调石墨烯-WSe异质结
Adv Mater. 2019 Jun;31(24):e1901392. doi: 10.1002/adma.201901392. Epub 2019 Apr 22.
8
Improvement of the Bias Stress Stability in 2D MoS and WS Transistors with a TiO Interfacial Layer.通过TiO界面层改善二维MoS和WS晶体管的偏置应力稳定性。
Nanomaterials (Basel). 2019 Aug 12;9(8):1155. doi: 10.3390/nano9081155.
9
Band Alignment in MoS2/WS2 Transition Metal Dichalcogenide Heterostructures Probed by Scanning Tunneling Microscopy and Spectroscopy.扫描隧道显微镜和光谱法研究 MoS2/WS2 过渡金属二硫化物异质结构中的能带排列。
Nano Lett. 2016 Aug 10;16(8):4831-7. doi: 10.1021/acs.nanolett.6b01007. Epub 2016 Jul 26.
10
Pressure coefficients for direct optical transitions in MoS2, MoSe2, WS2, and WSe2 crystals and semiconductor to metal transitions.二硫化钼、二硒化钼、二硫化钨和二硒化钨晶体中直接光学跃迁以及半导体到金属跃迁的压力系数。
Sci Rep. 2016 May 24;6:26663. doi: 10.1038/srep26663.

引用本文的文献

1
Impact of Confined Water on the Electronic Structure of the SiO and WS Interface.受限水对SiO与WS界面电子结构的影响。
ACS Appl Mater Interfaces. 2025 Feb 26;17(8):12841-12851. doi: 10.1021/acsami.4c19948. Epub 2025 Feb 13.
2
Ligand-Tuned AgBiS Planar Heterojunctions Enable Efficient Ultrathin Solar Cells.配体调控的AgBiS平面异质结助力高效超薄太阳能电池。
ACS Nano. 2024 Dec 10;18(49):33348-33358. doi: 10.1021/acsnano.4c07621. Epub 2024 Nov 27.
3
Tailored Growth of Transition Metal Dichalcogenides' Monolayers by Chemical Vapor Deposition.

本文引用的文献

1
Influence of MoS-metal interface on charge injection: a comparison between various metal contacts.二硫化钼-金属界面对电荷注入的影响:不同金属接触之间的比较
Nanotechnology. 2020 Sep 25;31(39):395713. doi: 10.1088/1361-6528/ab9cf6. Epub 2020 Jul 13.
2
Layer number dependence of the work function and optical properties of single and few layers MoS: effect of substrate.单层和少层 MoS2 的功函数和光学性质的层数依赖性:衬底的影响。
Nanotechnology. 2019 Jun 14;30(24):245708. doi: 10.1088/1361-6528/ab0caf. Epub 2019 Mar 5.
3
Approaching the Schottky-Mott limit in van der Waals metal-semiconductor junctions.
通过化学气相沉积法实现过渡金属二硫属化物单层的定制生长。
Small. 2025 Jul;21(28):e2403089. doi: 10.1002/smll.202403089. Epub 2024 Nov 2.
4
Large-Area Synthesis and Fabrication of Few-Layer hBN/Monolayer RGO Heterostructures for Enhanced Contact Surface Potential.用于增强接触表面电位的大面积合成及少层六方氮化硼/单层还原氧化石墨烯异质结构的制备
ACS Omega. 2024 Jun 3;9(24):26307-26315. doi: 10.1021/acsomega.4c02219. eCollection 2024 Jun 18.
5
Photoluminescence Enhancement of Monolayer WS by n-Doping with an Optically Excited Gold Disk.通过用光学激发的金盘进行n型掺杂实现单层WS的光致发光增强
Nano Lett. 2023 Dec 13;23(23):10848-10855. doi: 10.1021/acs.nanolett.3c03053. Epub 2023 Nov 15.
6
Exciton Dynamics in MoS-Pentacene and WSe-Pentacene Heterojunctions.二硫化钼-并五苯和二硒化钨-并五苯异质结中的激子动力学
ACS Nano. 2022 Oct 25;16(10):16668-16676. doi: 10.1021/acsnano.2c06144. Epub 2022 Sep 30.
在范德瓦尔斯金属-半导体结中接近肖特基-莫特极限。
Nature. 2018 May;557(7707):696-700. doi: 10.1038/s41586-018-0129-8. Epub 2018 May 16.
4
Probing defect dynamics in monolayer MoS via noise nanospectroscopy.通过噪声纳米光谱学探测单层 MoS 中的缺陷动力学。
Nat Commun. 2017 Dec 14;8(1):2121. doi: 10.1038/s41467-017-02297-3.
5
Experimental Determination of the Ionization Energies of MoSe, WS, and MoS on SiO Using Photoemission Electron Microscopy.使用光电发射电子显微镜测定 MoSe、WS 和 MoS 在 SiO 上的离化能。
ACS Nano. 2017 Aug 22;11(8):8223-8230. doi: 10.1021/acsnano.7b03242. Epub 2017 Jul 19.
6
In situ visualization and detection of surface potential variation of mono and multilayer MoS under different humidities using Kelvin probe force microscopy.使用开尔文探针力显微镜原位可视化和检测不同湿度下单层和多层MoS的表面电位变化。
Nanotechnology. 2017 Jun 30;28(29):295705. doi: 10.1088/1361-6528/aa7183.
7
Atomic Defects in Two-Dimensional Materials: From Single-Atom Spectroscopy to Functionalities in Opto-/Electronics, Nanomagnetism, and Catalysis.二维材料中的原子缺陷:从单原子光谱学到光电/电子学、纳米磁学和催化中的功能。
Adv Mater. 2017 Apr;29(14). doi: 10.1002/adma.201606434. Epub 2017 Mar 10.
8
Determination of band offsets, hybridization, and exciton binding in 2D semiconductor heterostructures.二维半导体异质结构中的能带偏移、杂化和激子结合的确定。
Sci Adv. 2017 Feb 8;3(2):e1601832. doi: 10.1126/sciadv.1601832. eCollection 2017 Feb.
9
Layer Dependence and Light Tuning Surface Potential of 2D MoS on Various Substrates.二维 MoS 各衬底的层依赖和光调控表面电势。
Small. 2017 Apr;13(14). doi: 10.1002/smll.201603103. Epub 2017 Jan 16.
10
Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides.单层二硫化钼的金属电接触中的费米能级钉扎。
ACS Nano. 2017 Feb 28;11(2):1588-1596. doi: 10.1021/acsnano.6b07159. Epub 2017 Jan 23.